Technical parameters/forward voltage: 1.6 V
Technical parameters/reverse recovery time: 120 ns
Technical parameters/Maximum reverse voltage (Vrrm): 1000 V
Technical parameters/forward current: 1.5 A
Technical parameters/maximum reverse leakage current (Ir): 1 uA
Technical parameters/forward current (Max): 1.5 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AC
External dimensions/packaging: DO-214AC
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 7500
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYG21M-E3/TR
|
VISHAY | 类似代替 | DO-214AC |
VISHAY BYG21M-E3/TR. 快速恢复功率整流器
|
||
BYG21M-E3/TR
|
Vishay Intertechnology | 类似代替 | DO-214AC |
VISHAY BYG21M-E3/TR. 快速恢复功率整流器
|
||
BYG21M-E3/TR
|
Vishay Semiconductor | 类似代替 | DO-214AC |
VISHAY BYG21M-E3/TR. 快速恢复功率整流器
|
||
BYG21M-E3/TR3
|
Vishay Dale | 完全替代 |
1.4A 至 20A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
|||
BYG21M-E3/TR3
|
Vishay Semiconductor | 完全替代 | DO-214AC |
1.4A 至 20A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 ### 二极管和整流器,Vishay Semiconductor
|
||
BYG21MHE3/TR3
|
Vishay Semiconductor | 类似代替 | DO-214AC |
整流器 1.5A 1000 Volt 75ns
|
||
BYG21MHE3/TR3
|
VISHAY | 类似代替 | DO-214AC |
整流器 1.5A 1000 Volt 75ns
|
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