Technical parameters/rated current: 1.50 A
Technical parameters/load current: 1 A
Technical parameters/forward voltage: 1.6V @1.5A
Technical parameters/reverse recovery time: 120 ns
Technical parameters/forward current: 1.5 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/forward voltage (Max): 1.6 V
Technical parameters/forward current (Max): 1.5 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AC
External dimensions/length: 4.5 mm
External dimensions/width: 2.79 mm
External dimensions/height: 2.29 mm
External dimensions/packaging: DO-214AC
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Consumer Electronics, Power Management, Automotive, Communication and Networking, Consumer Electronics, Communications&Networking, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYG21M-E3/TR3
|
Vishay Dale | 类似代替 |
1.4A 至 20A，Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
|
|||
BYG21M-E3/TR3
|
Vishay Semiconductor | 类似代替 | DO-214AC |
1.4A 至 20A，Vishay Semiconductor 采用工业标准封装类型的多用途、高效快速恢复功率二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
BYG21MHE3/TR3
|
Vishay Semiconductor | 类似代替 | DO-214AC |
整流器 1.5A 1000 Volt 75ns
|
||
BYG21MHE3/TR3
|
VISHAY | 类似代替 | DO-214AC |
整流器 1.5A 1000 Volt 75ns
|
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