Technical parameters/breakdown voltage of gate source: 35 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J112-E3
|
Vishay Semiconductor | 功能相似 | TO-92 |
JFET 55V 5mA
|
||
J113_D74Z
|
ON Semiconductor | 功能相似 | TO-92 |
JFET N-CH 35V 625mW TO92
|
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