Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): -50V
Technical parameters/maximum allowable collector current: -0.1A
Encapsulation parameters/Encapsulation: SOT-523
External dimensions/packaging: SOT-523
Other/Product Lifecycle: Active
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCW66GLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BCW66GLT1G 单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 800 mA, 160 hFE
|
||
DTA114YETL
|
ROHM Semiconductor | 功能相似 | SC-75-3 |
PNP -100mA -50V数字晶体管（偏置电阻内置晶体管） PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
|
||
MMBT3906TT1G
|
ON Semiconductor | 功能相似 | SC-75-3 |
ON SEMICONDUCTOR MMBT3906TT1G 单晶体管 双极, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE
|
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