Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5053
|
ROHM Semiconductor | 类似代替 | SOT-89 |
2SC5053 NPN三极管 60V 1A 150MHz 180~390 400mV/0.4V SOT-89/SC-62/MPT3 marking/标记 CGR
|
||
BST50
|
NXP | 功能相似 | SOT-89 |
NXP ### 双极性晶体管,NXP Semiconductors
|
||
BST50
|
Sanyo Semiconductor | 功能相似 | TO-243 |
NXP ### 双极性晶体管,NXP Semiconductors
|
||
BST50,115
|
NXP | 功能相似 | SOT-89-3 |
NXP BST50,115 单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
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