Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BST50,115
|
NXP | 功能相似 | SOT-89-3 |
NXP BST50,115 单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
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