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Model SI4814DY-T1-E3
Description SOIC N-CH 30V 5.5A/5.7A
Product QR code
Brand: VISHAY
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4774) Minimum order quantity(1)
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Technical parameters/drain source resistance: 21.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.90 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: 20.0 V

Technical parameters/Continuous drain current (Ids): 7.00 A

Technical parameters/rise time: 13 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4814DY SI4814DY Vishay Siliconix 功能相似 SO-8
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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