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Model SI4814DY
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Brand: Vishay Siliconix
Packaging SO-8
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5603) Minimum order quantity(1)
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Technical parameters/drain source resistance: 21.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.90 W

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/breakdown voltage of gate source: 20.0 V

Technical parameters/Continuous drain current (Ids): 7.00 A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SO-8

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4814DY-T1-E3 SI4814DY-T1-E3 Vishay Siliconix 功能相似 SO-8
MOSFET 30V 7.0/7.4A
PDF
SI4814DY-T1-E3 SI4814DY-T1-E3 VISHAY 功能相似 SOIC
MOSFET 30V 7.0/7.4A
PDF

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