Technical parameters/dissipated power: 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/height: 1.02 mm
External dimensions/packaging: TO-236
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N5116
|
Solitron Devices | 类似代替 |
Trans JFET P-CH
|
|||
JANTXV2N5116
|
Microsemi | 类似代替 | TO-18 |
Trans JFET P-CH
|
||
|
|
NXP | 功能相似 | SOT-23 |
PMBFJ174 P沟道结型场效应管 30 V =K40-20.0~-135.0mA SOT-23 marking/标记 W6X
|
||
|
|
Philips | 功能相似 |
PMBFJ174 P沟道结型场效应管 30 V =K40-20.0~-135.0mA SOT-23 marking/标记 W6X
|
|||
PMBFJ174,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ174,215 晶体管, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET
|
||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
|||
PMBFJ177
|
NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
|
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