Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 180 A
Technical parameters/polarity: N-CH
Technical parameters/product series: IRFS3207
Technical parameters/drain source voltage (Vds): 75.0 V
Technical parameters/Continuous drain current (Ids): 180 A
Technical parameters/rise time: 120 ns
Technical parameters/descent time: 74 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS3207PBF
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Infineon | 功能相似 | TO-263-3 |
N 通道功率 MOSFET 超过 100A,Infineon ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
|
||
IRFS3207TRLPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRFS3207TRLPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0036 ohm, 10 V, 4 V 新
|
||
IRFS3207ZPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
||
IRFS3207ZPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
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