Technical parameters/rated power: 330 W
Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 180A
Technical parameters/rise time: 120 ns
Technical parameters/Input capacitance (Ciss): 7600pF @50V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 74 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS3207TRLPBF
|
International Rectifier | 完全替代 | TO-263-3 |
INFINEON IRFS3207TRLPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0036 ohm, 10 V, 4 V 新
|
||
IRFS3207ZPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
||
IRFS3207ZPBF
|
Vishay Semiconductor | 类似代替 | TO-252-3 |
INFINEON IRFS3207ZPBF 晶体管, MOSFET, N沟道, 170 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
||
|
|
IFC | 类似代替 |
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
|||
IRFS3207ZTRRPBF
|
Infineon | 类似代替 | TO-263-3 |
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0033 ohm, 10 V, 4 V
|
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