Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 17A
Technical parameters/rise time: 14 nS
Technical parameters/Input capacitance (Ciss): 1800pF @100V(Vds)
Technical parameters/rated power (Max): 139 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 139 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.36 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPI50R299CP
|
Infineon | 类似代替 | TO-262-3 |
的CoolMOS功率晶体管 CoolMOS Power Transistor
|
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