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Model IPI50R299CP

Description The CoolMOS Power Transistor

Brand: Infineon

Packaging TO-262-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	270 mΩ
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	104 W
Technical parameters/threshold voltage:	2.5 V
Technical parameters/drain source voltage (Vds):	500 V
Technical parameters/Leakage source breakdown voltage:	500 V
Technical parameters/Continuous drain current (Ids):	12A
Technical parameters/rise time:	14 ns
Technical parameters/Input capacitance (Ciss):	1190pF @100V(Vds)
Technical parameters/rated power (Max):	104 W
Technical parameters/descent time:	12 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Encapsulation parameters/installation method:	Through Hole
Encapsulation parameters/Encapsulation:	TO-262-3
Dimensions/Length:	10.2 mm
Dimensions/Width:	4.5 mm
Dimensions/Height:	9.45 mm
Dimensions/Packaging:	TO-262-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	ERA99

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