Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 36 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2 W
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/rise time: 18 ns
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SO-8
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI9934DY-T1
|
Vishay Siliconix | 功能相似 | SOT |
Small Signal Field-Effect Transistor, 5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
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