Technical parameters/forward voltage: -750 mV
Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): -12.0 V
Technical parameters/rise time: 40.0 ns
Encapsulation parameters/Encapsulation: SOT
External dimensions/packaging: SOT
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI9934DY
|
Vishay Semiconductor | 功能相似 |
Small Signal Field-Effect Transistor, 5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
|||
SI9934DY
|
Vishay Siliconix | 功能相似 | SOT |
Small Signal Field-Effect Transistor, 5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
||
SI9934DY
|
Fairchild | 功能相似 | SO-8 |
Small Signal Field-Effect Transistor, 5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
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