Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 225 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NTE Electronics | 功能相似 | Through Hole |
t-Pnp Si- High Pwr Sw
|
||
MJ15016
|
ON Semiconductor | 功能相似 | TO-204-2 |
t-Pnp Si- High Pwr Sw
|
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