Technical parameters/rated voltage (DC): -120 V
Technical parameters/rated current: -15.0 A
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 180 W
Technical parameters/breakdown voltage (collector emitter): -120 V
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 115000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/length: 39.37 mm
External dimensions/width: 26.67 mm
External dimensions/height: 8.51 mm
External dimensions/packaging: TO-204-2
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUL58D
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS BUL58D 单晶体管 双极, NPN, 450 V, 85 W, 5 A, 38 hFE
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||
MD1802FX
|
ST Microelectronics | 功能相似 | ISOWATT-218FX-3 |
对于标准清晰度CRT显示器高压NPN功率晶体管 High voltage NPN Power transistor for standard Definition CRT display
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||
|
|
NTE Electronics | 功能相似 | Through Hole |
t-Pnp Si- High Pwr Sw
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MJ15016
|
ON Semiconductor | 功能相似 | TO-204-2 |
t-Pnp Si- High Pwr Sw
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MJ15016G
|
ON Semiconductor | 类似代替 | TO-204-2 |
ON SEMICONDUCTOR MJ15016G 单晶体管 双极, 音频, PNP, 120 V, 18 MHz, 180 W, 15 A, 70 hFE
|
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