Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 44.0 A
Technical parameters/polarity: N-CH
Technical parameters/input capacitance: 3.02 nF
Technical parameters/gate charge: 57.0 nC
Technical parameters/drain source voltage (Vds): 300 V
Technical parameters/Continuous drain current (Ids): 44.0 A
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 3018pF @25V(Vds)
Technical parameters/descent time: 2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 329000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Littelfuse | 功能相似 | 3 |
IXYS SEMICONDUCTOR IXFH40N30 晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
|
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IXFH40N30
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXFH40N30 晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
|
||
IXTH40N30
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
IXYS SEMICONDUCTOR IXTH40N30 晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
|
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