Technical parameters/rated voltage (DC): 300 V
Technical parameters/rated current: 40.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.085 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 300 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 4800pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Industrial, Industry, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STW75NF30
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW75NF30 晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V
|
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