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Description Bipolar Transistor - Bipolar Junction Transistor (BJT)
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Brand: Diodes
Packaging TO-92-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(8236) Minimum order quantity(1)
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Technical parameters/polarity: PNP

Technical parameters/dissipated power: 625 mW

Technical parameters/breakdown voltage (collector emitter): 400 V

Technical parameters/maximum allowable collector current: 0.3A

Technical parameters/Maximum current amplification factor (hFE): 40 @1mA, 10V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-92-3

External dimensions/length: 4.77 mm

External dimensions/width: 2.41 mm

External dimensions/height: 4.01 mm

External dimensions/packaging: TO-92-3

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

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