Technical parameters/polarity: PNP
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/Maximum current amplification factor (hFE): 40 @1mA, 10V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZTX758
|
Diodes Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZTX758 单晶体管 双极, PNP, 400 V, 50 MHz, 1 W, -500 mA, 50 hFE
|
||
ZTX758STOB
|
Diodes Zetex | 功能相似 | TO-92-3 |
TRANS PNP 400V 0.5A E-LINE
|
||
ZTX758STOB
|
Vishay Semiconductor | 功能相似 | E-Line-3 |
TRANS PNP 400V 0.5A E-LINE
|
||
|
|
Diodes | 功能相似 | TO-92 |
TRANS PNP 400V 0.5A E-LINE
|
||
ZTX758STZ
|
Diodes Zetex | 功能相似 | TO-92-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review