Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/minimum current amplification factor (hFE): 40 @200mA, 10V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA94STZ
|
Diodes | 功能相似 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT)
|
||
ZTX758
|
Diodes Zetex | 功能相似 | TO-92-3 |
DIODES INC. ZTX758 单晶体管 双极, PNP, 400 V, 50 MHz, 1 W, -500 mA, 50 hFE
|
||
ZTX758STZ
|
Diodes Zetex | 功能相似 | TO-92-3 |
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
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