Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 110 A
Technical parameters/product series: IRF3205S
Technical parameters/input capacitance: 3.25 nF
Technical parameters/gate charge: 146 nC
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/Continuous drain current (Ids): 110 A
Technical parameters/rise time: 101 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK
External dimensions/packaging: D2PAK
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR), Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF3205SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF3205SPBF 晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
|
||
IRF3205STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF3205STRLPBF 晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
|
||
IRF3205STRRPBF
|
International Rectifier | 功能相似 | D2PAK-3 |
场效应管(MOSFET) IRF3205STRRPBF D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review