Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 110 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/product series: IRF3205S
Technical parameters/threshold voltage: 2V ~ 4V
Technical parameters/input capacitance: 3.25 nF
Technical parameters/gate charge: 146 nC
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/Continuous drain current (Ids): 110 A
Technical parameters/rise time: 101 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-3
External dimensions/packaging: D2PAK-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB140NF75T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STB140NF75 系列 N 沟道 75 V 0.0075 Ω 160 nC STripFET™II MosFet - D2PAK
|
||
STB150NF55T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB150NF55T4 晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 4 V
|
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