Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 6.5A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 700pF @25V(Vds)
Technical parameters/descent time: 80 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 75000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9240
|
Infineon | 功能相似 | TO-204 |
Trans MOSFET P-CH 200V 11A 3Pin(2+Tab) TO-3
|
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|
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
IRF9240PBF
|
Infineon | 功能相似 | TO-3 |
TO-3P-CH 200V 11A
|
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