Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 11A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 功能相似 |
INFINEON IRF9230 晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
|
|||
IRF9230
|
Infineon | 功能相似 | TO-3 |
INFINEON IRF9230 晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
|
||
IRF9230
|
Samsung | 功能相似 |
INFINEON IRF9230 晶体管, MOSFET, P沟道, 6.5 A, -200 V, 800 mohm, -10 V, -4 V
|
|||
IRF9240
|
Infineon | 功能相似 | TO-204 |
-11A , -200V , 0.500欧姆,P沟道功率MOSFET -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET
|
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