Technical parameters/dissipated power: 250000 mW
Technical parameters/threshold voltage: 6 V
Technical parameters/output power: 100 W
Technical parameters/dissipated power (Max): 250000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: 744A-01
External dimensions/packaging: 744A-01
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF275G
|
M/A-Com | 功能相似 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
MRF275G
|
Motorola | 功能相似 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
MRF275G
|
M/A-Com | 功能相似 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
UF28150J
|
M/A-Com | 功能相似 | 375-04 |
功率MOSFET晶体管150瓦, 100 - 500兆赫, 28 V POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V
|
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