Technical parameters/frequency: 100MHz ~ 500MHz
Technical parameters/dissipated power: 389 W
Technical parameters/threshold voltage: 6 V
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/output power: 150 W
Technical parameters/gain: 8 dB
Technical parameters/test current: 400 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 233000 mW
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: 375-04
External dimensions/packaging: 375-04
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF275G
|
M/A-Com | 类似代替 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
MRF275G
|
Motorola | 类似代替 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
||
MRF275G
|
M/A-Com | 类似代替 | 375-04 |
射频MOSFET线150W ,为500MHz , 28V The RF MOSFET Line 150W, 500MHz, 28V
|
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