Technical parameters/dissipated power: 480 mW
Technical parameters/test current: 20 mA
Technical parameters/voltage regulation value: 4.3 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ITT Corporation | 功能相似 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
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1N749A
|
Microsemi | 功能相似 | DO-35 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
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1N749A
|
Fairchild | 功能相似 | DO-35-2 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
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1N749A
|
TI | 功能相似 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
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|||
1N749A-1
|
Microsemi | 功能相似 | DO-213AA-2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
1N749A-1E3
|
Microsemi | 功能相似 | DO-35 |
DO-35 4.3V 0.5W(1/2W)
|
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