Technical parameters/rated voltage (DC): 4.30 V
Technical parameters/tolerances: ±5 %
Technical parameters/rated power: 400 mW
Technical parameters/breakdown voltage: 4.30 V
Technical parameters/forward voltage: 1.5V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 20 mA
Technical parameters/voltage regulation value: 4.3 V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35-2
External dimensions/length: 4.56 mm
External dimensions/width: 1.91 mm
External dimensions/height: 1.91 mm
External dimensions/packaging: DO-35-2
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Rectron Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
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1N5229B
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Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
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1N5229B
|
ON Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
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Philips | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
|||
|
|
CHENG-YI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
|||
|
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
||
1N5229B
|
SynSemi | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
||
1N5229B
|
Diodes | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
||
1N5229B
|
DC Components | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
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1N5229B
|
Central Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
||
1N5229B
|
New Jersey Semiconductor | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
|||
1N5229B
|
Microchip | 类似代替 | DO-7 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
||
1N5229B
|
ST Microelectronics | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5229B. 齐纳二极管
|
||
1N749
|
Continental Device | 功能相似 |
4.3V Professional Grade 400mW Axial Zener DiodeY
|
|||
1N749
|
International Rectifier | 功能相似 |
4.3V Professional Grade 400mW Axial Zener DiodeY
|
|||
|
|
ITT Corporation | 功能相似 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
|||
1N749A
|
Microsemi | 功能相似 | DO-35 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
||
1N749A
|
Fairchild | 功能相似 | DO-35-2 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
||
1N749A
|
TI | 功能相似 |
Zener Diode 4.3V 0.5W(1/2W) 5% Do-35 Case
|
|||
1N749A-1
|
Microsemi | 功能相似 | DO-213AA-2 |
SILICON 400毫瓦齐纳二极管 SILICON 400 mW ZENER DIODES
|
||
|
|
EIC | 功能相似 | DO-35 |
NTE ELECTRONICS 1N962B 齐纳二极管, 500mW, 11V, DO-204AH-2
|
||
1N962B
|
Central Semiconductor | 功能相似 | DO-35 |
NTE ELECTRONICS 1N962B 齐纳二极管, 500mW, 11V, DO-204AH-2
|
||
BZV55C12
|
DC Components | 功能相似 |
单管二极管 齐纳, 12 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
|||
|
|
Taiwan Semiconductor | 功能相似 | MINIMELF-2 |
单管二极管 齐纳, 12 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
|
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