Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -3.60 A
Technical parameters/polarity: Dual P-Channel
Technical parameters/product series: IRF7306
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/leakage source breakdown voltage: -30.0 V
Technical parameters/Continuous drain current (Ids): 3.60 A
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7306PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7306PBF 双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V
|
||
IRF7306TR
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC P-CH 30V 3.6A
|
||
IRF7306TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7306TRPBF 双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
|
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