Technical parameters/rated power: 2 W
Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 1.4 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 3.6A
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 440pF @25V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7306
|
Infineon | 类似代替 | SOIC-8 |
SOIC P-CH 30V 3.6A
|
||
IRF7306TR
|
International Rectifier | 类似代替 | SOIC-8 |
SOIC P-CH 30V 3.6A
|
||
IRF7306TRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7306TRPBF 双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
|
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