Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.047 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 90 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1010NSTRLPBF
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International Rectifier | 功能相似 | TO-263-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRF1010NSTRLPBF
|
Infineon | 功能相似 | TO-263-3 |
HEXFET® N 通道功率 MOSFET 超过 55A，Infineon ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
STB60NF06LT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB60NF06LT4 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 5 V, 1 V
|
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