Technical parameters/drain source resistance: 2.00 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: CDIP
External dimensions/packaging: CDIP
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VQ3001J
|
VISHAY | 功能相似 | PDIP |
Transistor,
|
||
VQ3001J
|
Vishay Siliconix | 功能相似 | PDIP |
Transistor,
|
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