Technical parameters/rated current: 40.0 A
Technical parameters/forward current: 40 A
Technical parameters/forward voltage (Max): 1.3 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-5
External dimensions/packaging: DO-5
Physical parameters/operating temperature: -65℃ ~ 190℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/HTS code: 85411000800
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | DO-203AB-2 |
广颖电整流器 Silicon Power Rectifier
|
||
|
|
Solid State Devices | 功能相似 | DO-203AB |
广颖电整流器 Silicon Power Rectifier
|
||
|
|
NJS | 功能相似 | 2 |
广颖电整流器 Silicon Power Rectifier
|
||
1N1188A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
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|
||
|
|
NJS | 功能相似 | 2 |
广颖电整流器 SILICON POWER RECTIFIER
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||
|
|
Microsemi | 功能相似 | DO-5 |
广颖电整流器 SILICON POWER RECTIFIER
|
||
1N1196
|
ST Microelectronics | 功能相似 |
广颖电整流器 SILICON POWER RECTIFIER
|
|||
1N3212
|
VISHAY | 功能相似 | DO-203AB |
广颖电整流器 SILICON POWER RECTIFIER
|
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