Technical parameters/forward voltage: 1.1V @40A
Technical parameters/forward voltage (Max): 1.1V @40A
Technical parameters/forward current (Max): 40 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-203AB
External dimensions/packaging: DO-203AB
Physical parameters/operating temperature: 150 ℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 功能相似 | DO-203AB-2 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
Solid State Devices | 功能相似 | DO-203AB |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
NJS | 功能相似 | 2 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
1N1188A
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
NJS | 功能相似 | 2 |
广颖电整流器 SILICON POWER RECTIFIER
|
||
|
|
Microsemi | 功能相似 | DO-5 |
广颖电整流器 SILICON POWER RECTIFIER
|
||
1N1196
|
ST Microelectronics | 功能相似 |
广颖电整流器 SILICON POWER RECTIFIER
|
|||
NTE5990
|
NTE Electronics | 功能相似 | DO-5 |
NTE ELECTRONICS NTE5990 标准恢复功率整流器
|
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