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Model SI4963DY-E3
Description MOSFET 20V 6.2A 2W
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Brand: Vishay Siliconix
Packaging SO-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5633) Minimum order quantity(1)
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Technical parameters/drain source resistance: 33.0 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 2.00 W

Technical parameters/breakdown voltage of gate source: ±12.0 V

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4966DY-T1-E3 SI4966DY-T1-E3 Vishay Semiconductor 功能相似 SOIC-8
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
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SI4966DY-T1-E3 SI4966DY-T1-E3 VISHAY 功能相似 SOIC-8
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.019Ω; ID +/-7.1A; SO-8; PD 2W; VGS +/-1
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