Technical parameters/frequency: 250 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 330 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/dissipated power (Max): 330 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858AE6327
|
Infineon | 类似代替 | SOT-23-3 |
PNP 晶体管,Infineon ### 双极晶体管,Infineon
|
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|
General Semiconductor | 功能相似 |
NXP BC858B 单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
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Micro Commercial Components | 功能相似 |
NXP BC858B 单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
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BC858B
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Siemens AG | 功能相似 |
NXP BC858B 单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
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BC858B
|
Nexperia | 功能相似 | SOT-23 |
NXP BC858B 单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
|
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BC858B
|
Infineon | 功能相似 | SOT-23-3-3 |
NXP BC858B 单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
|
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