Technical parameters/minimum current amplification factor (hFE): 220
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858AE6327
|
Infineon | 功能相似 | SOT-23-3 |
PNP 晶体管,Infineon ### 双极晶体管,Infineon
|
||
BC858BLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC858BLT1G 单晶体管 双极, 通用, PNP, 30 V, 100 MHz, 225 mW, 100 mA, 100 hFE
|
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