Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1 W
Technical parameters/maximum allowable collector current: 1A
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/HTS code: 85412100959
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Diodes | 类似代替 | SOT-89 |
1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
||
BCX53-10TA
|
Diodes | 类似代替 | SOT-89 |
Trans GP BJT PNP 80V 1A 4Pin(3+Tab) SOT-89 T/R
|
||
|
|
Philips | 类似代替 | SOT-89 |
NXP ### 双极性晶体管,NXP Semiconductors
|
||
BST62
|
Nexperia | 类似代替 | SOT-89 |
NXP ### 双极性晶体管,NXP Semiconductors
|
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