Technical parameters/number of channels: 2
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.028 Ω
Technical parameters/polarity: Dual N-Channel
Technical parameters/dissipated power: 65 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 610pF @25V(Vds)
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 65 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: TDSON-8
External dimensions/length: 5.15 mm
External dimensions/width: 5.9 mm
External dimensions/height: 1 mm
External dimensions/packaging: TDSON-8
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Direct Fuel Injection, Automotive, LED and Body lighting, ABS Valves, Solenoid control, Load Switches
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPG20N06S3L-35
|
Infineon | 功能相似 | PG-TDSON-8-4 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
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