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Model IPG20N06S3L-35
Description 的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
Product QR code
Brand: Infineon
Packaging PG-TDSON-8-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.11  yuan 2.11yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4403) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/drain source voltage (Vds):

55 V

 

Technical parameters/Continuous drain current (Ids):

20A

 

Technical parameters/Input capacitance (Ciss):

1730pF @25V(Vds)

 

Technical parameters/rated power (Max):

30 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

PG-TDSON-8-4

 

Dimensions/Packaging:

PG-TDSON-8-4

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IPG20N06S2L-35 IPG20N06S2L-35 Infineon 功能相似 TDSON-8
INFINEON IPG20N06S2L-35 双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.028 ohm, 10 V, 1.6 V
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