Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/drain source resistance: 110 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.10 W
Technical parameters/input capacitance: 455 pF
Technical parameters/gate charge: 22.0 nC
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 324pF @25V(Vds)
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223
External dimensions/packaging: SOT-223
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTF3055-100T1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
|
||
|
|
ON Semiconductor | 类似代替 | SOT-223 |
功率MOSFET 2.0安培， 60伏特N沟道SOT- 223 Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
|
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