Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2 Ω
Technical parameters/dissipated power: 350 mW
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/packaging: TO-236
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002K-T1-GE3
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Vishay Semiconductor | 功能相似 | SOT-23-3 |
VISHAY 2N7002K-T1-GE3 晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2 V
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2N7002K-T1-GE3
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Vishay Intertechnology | 功能相似 |
VISHAY 2N7002K-T1-GE3 晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2 V
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