Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: N-CH
Technical parameters/product series: IRF8910
Technical parameters/drain source voltage (Vds): 20.0 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 10 ns
Technical parameters/thermal resistance: 62.5 K/W
Technical parameters/descent time: 4.1 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF8910PBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRF8910PBF 双路场效应管, MOSFET, 双N沟道, 10 A, 20 V, 13.4 mohm, 10 V, 2.55 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review