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Model IRF8910PBF

Description Trans MOSFET N-CH 20V 10A 8Pin SOIC Tube

Brand: International Rectifier

Packaging SOIC-8

Delivery time

Packaging method Rail, Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	20.0 V
Technical parameters/rated current:	10.0 A
Technical parameters/drain source resistance:	0.0134 Ω
Technical parameters/polarity:	N-Channel, Dual N-Channel
Technical parameters/dissipated power:	2 W
Technical parameters/product series:	IRF8910
Technical parameters/threshold voltage:	2.55 V
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	20 V
Technical parameters/Continuous drain current (Ids):	10.0 A
Technical parameters/rise time:	10.0 ns
Technical parameters/thermal resistance:	62.5℃/W (RθJA)
Technical parameters/Input capacitance (Ciss):	960pF @10V(Vds)
Technical parameters/rated power (Max):	2 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Rail, Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2014/12/17