Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/Continuous drain current (Ids): 3A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 1316pF @25V(Vds)
Technical parameters/descent time: 33 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/packaging: D2PAK-263
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK1119
|
Toshiba | 功能相似 | TO-220 |
TO-220AB N-CH 1000V 4A
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|
Freescale | 功能相似 |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
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MTB3N100E
|
ON Semiconductor | 功能相似 | D2PAK-263 |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
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MTP3N100E
|
ON Semiconductor | 功能相似 |
Trans MOSFET N-CH Si 1kV 3A 3Pin(3+Tab) TO-220AB
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