Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 1000 V |
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Technical parameters/Continuous drain current (Ids): | 4A |
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Technical parameters/dissipated power (Max): | 100W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
|
|||
MTB3N100E
|
ON Semiconductor | 功能相似 | D2PAK-263 |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
|
||
MTP3N100E
|
ON Semiconductor | 功能相似 |
Trans MOSFET N-CH Si 1kV 3A 3Pin(3+Tab) TO-220AB
|
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