Technical parameters/rated power: 0.25 W
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/Maximum current amplification factor (hFE): 20
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/length: 2.00 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.90 mm
External dimensions/packaging: SOT-323
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Infineon | 完全替代 | SOT-323 |
NPN硅数字晶体管(开关电路,逆变器,接口电路,驱动电路) NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
|
||
BCR141W
|
Infineon | 类似代替 | SOT-323 |
BCR141W 带阻NPN三极管 50V 100mA/0.1A 22k 22k SOT-323/SC-70 marking/标记 WD 开关电路 逆变器 接口电路 驱动电路
|
||
PUMB11,115
|
NXP | 功能相似 | SOT-363-6 |
Nexperia PUMB11,115 双 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 6引脚 UMT封装
|
||
PUMB11,115
|
Nexperia | 功能相似 | SC-70-6 |
Nexperia PUMB11,115 双 PNP 数字晶体管, 100 mA, Vce=50 V, 10 kΩ, 电阻比:1, 6引脚 UMT封装
|
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