Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCR112W
|
Infineon | 完全替代 | SOT-323 |
NPN硅晶体管数字 NPN Silicon Digital Transistor
|
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|
|
Infineon | 完全替代 | SOT-323 |
NPN硅数字晶体管(开关电路,逆变器,接口电路,驱动电路) NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
|
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BCR141W
|
Infineon | 完全替代 | SOT-323 |
BCR141W 带阻NPN三极管 50V 100mA/0.1A 22k 22k SOT-323/SC-70 marking/标记 WD 开关电路 逆变器 接口电路 驱动电路
|
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