Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/maximum allowable collector current: 6A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 完全替代 | TO-3 |
Bipolar Transistors - BJT NPN Transistor
|
||
2N5877
|
Microchip | 完全替代 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N5877
|
ETC | 完全替代 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N6673
|
Microchip | 完全替代 |
Trans GP BJT NPN 400V 8A 3Pin(2+Tab) TO-3
|
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